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1 kW and 2 kW Laser-Based Floating Zone Furnace – Quantum Design Laser Furnace

1 kW and 2 kW Laser-Based Floating Zone Furnace

Quantum Design Laser Furnace

The 1 kW and 2 kW laser furnace for single crystal fabrication is based on a design and developed in close cooperation with the RIKEN Center for Emergent Matter Science under the leadership of Yoshio Kaneko. Both melting zones have 5 lasers each, which guarantees a high uniformity of power density in the melting zone range. The laser profile has been optimized to reduce thermal stress during the crystal growth process. In addition, the system includes an integrated temperature sensor for real-time temperature monitoring. Temperatures up to 3000 °C can be reached and therefore materials with a very high vapor pressure, a narrow temperature range of the melt, a high thermal conductivity coefficient and incongruent melts can be melted.

It is possible to cover the entire temperature range with this laser furnace, for which several furnaces with halogen and xenon lamps are usually required. 400 °C to 3000 °C can be achieved without the need for laser alignment or other optical system adjustments. The temperature of the melt zone can be directly monitored and recorded over the entire temperature range up to 3000 °C with an integrated radiation thermometer. This enables high-precision single crystal growth. The use of the RIKEN optical system ensures radiation stability. The diode laser source (DL source) is divided into 5 laser beams. A stable optical system ensures that the 5 heating laser beams do not fluctuate. The power of each individual heating beam is the same for all 5 beams. The laser beam is a continuous oscillation laser. The irradiation intensity is very stable over time.

Features

  • Wide temperature range from 400 °C to 3000 °C
  • Reduction of thermal stresses due to adapted laser profile
  • Real-time temperature monitoring
  • Suitable for degassing materials
  • High laser stability due to patented design
  • High vision full HDTV camera for growth monitoring
  • Ubiquitous control possible by PC/Smartphone for remote monitoring/control of the crystal growth process

Specifications

  • 5 laser beams/heads
  • Laser power: 2000 watts in FZ region (400 watts × 5 beams)
  • Temperature range: 400 °C ~ 3000 °C (material dependent)
  • Temperature monitoring: 800 °C ~ 3000 °C (radiation thermometer)
  • ±1 °C temperature reproducible over entire temperature range
  • Crystal growth max. length: 150 mm
  • Crystal growth control: 8 mm
  • Growth speed: 0.1 to 200 mm (mm/hr)
  • Rotation rate: 0.1 to 40 rpm
  • Pressure range: 1*10-4 torr to 10 bar
  • Dimension D 200 x W 250 x H 220 [cm]

Resources

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